ECH8649
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
20
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID=4A
0.5
4.2
7
1.3
V
S
RDS(on)1
ID=4A, VGS=4.5V
9
13
17
m Ω
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
RDS(on)4
ID=4A, VGS=4.0V
ID=4A, VGS=3.1V
ID=2A, VGS=2.5V
9.4
11
12.5
13.5
16
18
18
22
26
m Ω
m Ω
m Ω
Input Capacitance
Ciss
1060
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=10V, f=1MHz
See speci ? ed Test Circuit.
VDS=10V, VGS=4.5V, ID=7.5A
180
135
17.5
120
68
80
10.8
2.1
2.9
pF
pF
ns
ns
ns
ns
nC
nC
nC
Diode Forward Voltage
VSD
IS=7.5A, VGS=0V
0.74
1.2
V
Switching Time Test Circuit
4V
0V
VIN
VIN
VDD=10V
ID=4A
RL=2.5 Ω
PW=10 μ s
D
VOUT
D.C. ≤ 1%
G
ECH8649
P.G
50 Ω
S
Ordering Information
Device
ECH8649-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A0854-2/7
相关PDF资料
ECH8651R-TL-HX MOSFET N-CH DUAL 24V 10A ECH8
ECH8651R-TL-H MOSFET N-CH DUAL 24V 10A ECH8
ECH8652-TL-H MOSFET P-CH 12V 6A ECH8
ECH8653-TL-H MOSFET N-CH DUAL 20V 7.5A ECH8
ECH8655R-TL-H MOSFET N-CH DUAL 24V 9A ECH8
ECH8656-TL-H MOSFET N-CH 20V 7.5A ECH8
ECH8657-TL-H MOSFET N-CH DUAL 35V 4.5A ECH8
ECH8659-TL-H MOSFET N-CH DUAL 30V 7A ECH8
相关代理商/技术参数
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ECH8651R-R-TL-H 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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ECH8652 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
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